Abstract
This paper presents the design of a broadband variable-gain low-noise amplifier (LNA) working in the RF band 6336–6864MHz.In this design, common gate amplifiers are used to get excellent input matching and linearity. To get lower noise figure (NF), the proposed LNA adopts Capacitive Cross-coupling (CCC) structure. Two PMOS transistors are introduced as positive feedback to optimize NF and bandwidth. Switches are added to achieve variable gain. The LNA is fabricated in TSMC 0.13-µm process. The post simulation results show the proposed LNA has a voltage gain of 21.3 dB to 22.8 dB in the frequency range from 6336 to 6864MHz. The LNA achieves NF less than 3dB at maximum gain mode. Return loss S11 of the LNA is better than −10.4dB and S22 is less than −14.7dB. The proposed wideband LNA consumes 7.8mA from a 1.2V supply.
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