Abstract
A silicon-based polarization rotator (PR) for cross-slot waveguides is proposed and analyzed. The rotation region of the PR is formed by removing one of the silicon wires from a cross-slot waveguide, resulting in a strong hybridity for the lowest eigenmodes. As a result, the TE (TM) polarization can be rotated efficiently to the TM (TE) polarization at a length of 18.9 μm. The results show that the extinction ratio (ER) (insertion loss) is 31.6 (0.37) dB for TE-to-TM mode and 31.9 (0.37) dB for TM-to-TE mode. Moreover, a wide bandwidth of ∼230  nm for both polarizations is obtained for keeping the ER over 20 dB. In addition, fabrication tolerances to the structural parameters are investigated, and field evolution along the propagation distance is also presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
