Abstract
A block replicate gate has been designed for 4 μm period ion-implanted bubble devices. The gate consists of a conductor lying across a V-shaped unimplanted pattern between the minor loop end and the major line. Replication is accomplished by stretching the bubble with a stretch pulse through the conductor, cutting the domain by means of the charged wall formed at the edge of the V-shaped pattern together with a pulse of short duration, then restoring the bubble to the original condition by means of another stretch pulse. A bias field margin of 20 Oe was obtained with an error rate of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-5</sup> for a 100 kHz, 80 Oe peak triangular drive field.
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