Design of a 28 GHz Power Amplifier in 0.15 μm GaN Technology

Abstract

This paper presents the design and simulation of two single-stage power amplifiers (PAs) to determine the performance capabilities of WIN Semiconductors 0.15 μm Gallium Nitride (GaN)-on-SiC process. Subsequently a 28 GHz two-stage PA is presented for potential integration into 5G transceiver applications. A 2×100 gate-width device was used to develop a driving stage PA (MMIC1) which produced a simulated 12.8 dB small signal gain at the desired 28 GHz. A 4×100 gate-width device was used to characterize an output stage PA (MMIC2) producing 33 dBm power out, PAE of 41%, and a power gain of 11.2 dB. The subsequently designed two-stage PA, MMIC3, combines MMIC1 and MMIC2 and provides a peak small signal gain of 22.5 dB, peak power output of 33 dBm, peak PAE of 31% and peak power gain of 22.4 dB.