Abstract
AbstractIn this paper, a negative‐resistance‐type push‐push voltage‐controlled‐oscillator (VCO) is proposed using a 0.07μm InAlAs/InGaAs MHEMT technology with ft of 300 GHz and fmax of 400 GHz. The Common‐gate structure of two sub‐oscillators shows more strong instability and excellent phase noise performance comparing with common‐source structure. And a strong second harmonic signal achieved −3 dBm of output power and −106 dBc/Hz@1 MHz offset of Phase noise at 220 GHz is generated by directly drain‐connecting and extremely simplified Output matching structure.
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