Abstract
A 1200-V thin-silicon-layer p-channel silicon-on-insulator (SOI) lateral double-diffused metal-oxide-semiconductor (LDMOS) transistor is designed. The device named INI SOI p-LDMOS is characterized by a series of equidistant high concentration n+ islands inserted at the interface of a top silicon layer and a buried oxide layer. Accumulation-mode holes, caused by the electric potential dispersion between the device surface and the substrate, are located in the spacing between two neighboring n+ islands, and greatly enhance the electric field of the buried oxide layer and therefore, effectively increase the device breakdown voltage. Based on a 2-μm-thick buried oxide layer and a 1.5-μm-thick top silicon layer, a breakdown voltage of 1224 V is obtained, resulting in the high electric field (608 V/μm) of the buried oxide layer.
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