Design of a 1 V low power CMOS bandgap reference based on resistive subdivision

Abstract

The design of a CMOS bandgap reference (BGR), for portable applications with medium accuracy, is described and the measurement results of the fabricated chips are presented. The output voltage of the reference is set by resistive subdivision. In order to achieve small area and low power consumption, n-well resistors are used. This design features a reference voltage of 0.750 V with 1/spl sigma/ variation of 10 mV (1.3%) without trimming with a supply voltage range from 1 V to 1.6 V and temperature range of -20/spl deg/C-50/spl deg/C measured from 10 samples. The maximum supply current is 4.5 /spl mu/A and the area of the design is /spl sim/0.13 mm/sup 2/ with a standard 0.35 /spl mu/m double-poly n-well CMOS process.