Design of 2D GaN photonic crystal based on hole displacement for L3 cavity

Nur Dalila Mohd Zamani,Ahmad Rifqi Md Zain,Dilla Duryha Berhanuddin,Burhanuddin Yeop Majlis,Mohd Nuriman Nawi

doi:10.1177/1847980420966887

Nur Dalila Mohd Zamani, Ahmad Rifqi Md Zain + Show 3 more

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https://doi.org/10.1177/1847980420966887

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Abstract

In this article, we report modeling, simulation, and analysis of shifting 2D photonic crystal cavity side holes in GaN-AlN-sapphire layered structure. The design was simulated with Lumerical finite-difference time-domain. A lattice constant a, 157 nm, and a hole diameter d, 106 nm, were used in the design. The cavities are based on L3, which we demonstrated by simply shifting two holes away from a line cavity with distances of 132, 142, and 152 nm, respectively. The highest quality factor, Q, value achieved is 2.25 × 104 at 152-nm cavity distance.

Highlights

Photonic crystal (PhC) has garnered more research attention recently because of the capability in controlling the propagation of light
The photonic bandgap (PBG) that limit the propagation of light is very sensitive to the wavelength and angle of incident light in PhC3; due to these drawbacks, the energy band of the semiconductor material of the lightemitting wave range must be located in the PBG.[4]
AlN as a buffer layer is significant for fabrication of gallium nitride (GaN), which is in the previous study has reported that the growth of GaN was deposited on the AlN buffer layer

Summary

Introduction

Photonic crystal (PhC) has garnered more research attention recently because of the capability in controlling the propagation of light. PhC has PBG due to its periodic dielectric structure and different frequency[16] and can be used in many applications, including the fabrication of lossless dielectric, mirrors, and resonant cavities for optical light.[17] Wide bandgap III-nitride semiconductor, such as gallium nitride (GaN), is well-known optoelectronic material for light-emitting diodes and laser application.[18,19] it has been recently determined as a potential material system for technologies, such as PhC-based circuits and applications.[20,21,22] AlN as a buffer layer is significant for fabrication of GaN, which is in the previous study has reported that the growth of GaN was deposited on the AlN buffer layer.

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