Abstract
A power new type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device that reduces the on-resistance and increases the breakdown voltage is designed. The relationship between breakdown voltage and epitaxial concentration, depletion layer width and resistivity was analyzed. The computer simulation software Sentaurus TCAD was used to simulate and verify the 650V 4A N-channel MOSFET. The simulation results show that the specific on-resistance value of the novel MOSFET structure is reduced by 28.5% of that of the traditional VDMOS (Vertical Double-Diffused Metal Oxide Semiconductor) structure, the reverse breakdown voltage is increased by 3.3%. The novel structure with double trench gates reduces the JFET annealing process in the process flow and adds only one mask.
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