Abstract
Microelectromechanical Systems (MEMS) pressure sensors are premeditated and characterised in this paper. Sensors with piezo-resistive transduction mechanism have been preferred due to their various benefits such as small dimension, high sensitivity, low cost and simple fabrication. The paper tries to shift focus from the conventional CMOS material in order to draw attention towards silicon carbide based piezo-resistors. Deflection and stress of the piezo-resistive pressure sensors have been computed for silicon carbide clamped edge circular shaped diaphragm according to the theory of elasticity. The two most important characteristics of a pressure sensor i.e. sensitivity and linearity have been reported for the (0-100) psi pressure range. Simulation of results obtained have been done to state the significance of parameters such as effective resistor length, sensitivity etc.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
