Abstract

This paper presents the design, modeling, fabrication, and evaluation of thermoelectric generators (TEGs) with p-type polysilicon deposited by hot-wire chemical vapor deposition (HWCVD) as thermoelement material. A thermal model is developed based on energy balance and heat transfer equations using lumped thermal conductances. Several test structures were fabricated to allow characterization of the boron-doped polysilicon material deposited by HWCVD. The film was found to be electrically active without any post-deposition annealing. Based on the tests performed on the test structures, it is determined that the Seebeck coefficient, thermal conductivity, and electrical resistivity of the HWCVD polysilicon are 113 μV/K, 126 W/mK, and 3.58 × 10−5 Ω m, respectively. Results from laser tests performed on the fabricated TEG are in good agreement with the thermal model. The temperature values derived from the thermal model are within 2.8% of the measured temperature values. For a 1-W laser input, an open-circuit voltage and output power of 247 mV and 347 nW, respectively, were generated. This translates to a temperature difference of 63°C across the thermoelements. This paper demonstrates that HWCVD, which is a cost-effective way of producing solar cells, can also be applied in the production of TEGs. By establishing that HWCVD polysilicon can be an effective thermoelectric material, further work on developing photovoltaic-thermoelectric (PV-TE) hybrid microsystems that are cost-effective and better performing can be explored.

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