Abstract
To provide theoretical designs for performance improvement, MoS2-based FETs with 2 nm gate length are investigated by numerical simulations. It is found that by optimizing structure with underlap (UL), off-current (I off) is suppressed by ∼103 in MoS2 FETs. Contact engineering by H-passivation could modulate the Schottky barrier for higher on-current (I on) and lower subthreshold swing in Si-MoS2 FETs. More importantly, even in Si-MoS2 FETs with 2 nm gate length, ∼107 I on/I off could be achieved by structure optimization to suppress I off and contact engineering to modulate the Schottky barrier. Our results are significant to guide designs of MoS2 integrations in ultimate-scaled technology.
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