Abstract
Avalanche induced oscillation phenomena during reverse recovery of power PiN diodes are investigated for the purpose of “Design for EMI”. The oscillation phenomena are the major barrier to improve power diode performance since the oscillation can cause serious EMI, affecting power electronics system reliability. The mechanism of the oscillation is precisely modelled under various diode structures and current ranges. The result will contribute to the design methodology to attain stable yet high performance diodes and power electronics systems.
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