Abstract
Porous silicon based piezoresistive pressure sensor has been designed, fabricated and tested in the range of 0 to 1 bar and temperature range of 20/spl deg/C to 80/spl deg/C. A suitable signal conditioning analog circuit consisting of constant current generator and an offset adjustable low noise instrumentation amplifier has been designed and tested. The analog output is then digitized through an ADC and fed to FPGA. Architecture for compensation of nonlinear temperature dependence of pressure sensor has been implemented and tested in FPGA. A device model of porous silicon pressure sensor has also been developed with a view to realize a SMART pressure sensor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
