Abstract
In this work, a 4.5kV/50A 4H-SiC PiN rectifiers with mesa combined with double-JTE structures is successfully developed for high power applications. Two-dimension numerical device simulator Silvaco-TCAD is applied to optimizing the electrical performance of fabricated rectifiers. Mesa-combined double-JTE structure is utilized to achieve a high blocking voltage with a wider optimum process latitude. A forward current is 50 A at room temperature when SiC PiN device bias 4.1 V, while the maximum blocking voltage achieved is 4.7 kV, reaching up to 86% of parallel-plane junction bulk breakdown.
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