Abstract

The LLC resonant converter features high power conversion efficiencies because of its capability in soft-switching operation. To further enhance the power density performance, the switching frequency can be increased by using high-performance wide band-gap semiconductor devices. In the case of higher switching frequencies (e.g., > several hundreds of kHz), however, the side effect of the transformer secondary leakage inductance on the LLC resonant converter is pronounced and cannot be ignored. Taking into account the secondary leakage inductance, an improved model for the LLC resonant converter is developed based on the fundamental harmonic analysis (FHA). Then, the effect of the secondary leakage inductance is analyzed with the help of the improved model. A time-domain simulation model is built to verify the proposed model. It turns out that the improved model enables a much more accurate prediction for the voltage gain characteristic of the LLC resonant converter.

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