Abstract
An analysis of a high-voltage gate turn-off (GTO) thyristor structure with a double-layered n base (p-i-n structure) is presented. From integration of Poisson's equation, an expression for the forward-blocking voltage at the onset of avalanche breakdown is obtained. Simple design criteria are developed to calculate the optimal thickness and doping density of the n base of a conventional pnpn structure designed for a specific voltage-blocking capability. The same principle is applied to design for the doping densities and thicknesses of the high-resistivity region and the buffer layer of the p-i-n GTO structure. The forward-blocking voltage, as well as the on-state voltage (at a current density of 300 A cm/sup -2/) is predicted for a wide range of base layer thicknesses and doping densities to illustrate the available tradeoff options. Lowest on-state power dissipation for high blocking voltages (>6000 V) is predicted for a doping level of 5*10/sup 12/ cm/sup -3/ in the high-resistivity layer.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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