Abstract
We describe a theoretical study of a single-sided two-dimensional read-out pixel structure to be used as a high resolution tracking detector. This pixel, located on the ohmic side of a depleted p-i-n diode, consists of a n-well and a double drain pMOS transistor in the n-well. The outputs from the drain nodes of the pMOS pixels are ganged together to make a strip-like structure. The pixel detector with such transistors has superior characteristics to double-sided strip detectors currently used in high energy physics experiments. It has a built-in amplification action, resulting in high signal-to-noise detection of charged particles. The electronic noise charge is about 388 electrons for 256 pixels ganged together in a line. It has an advantage of a two-dimensional read-out configuration on a single-sided device. Simpler and cheaper fabrication technology can be used to process such a structure on wafers with diameters exceeding the traditional dimension of 4 in. The structure and electronic properties of the pixel detector are described together with descriptions of signal processing, amplification, noise and linearity in terms of fabrication parameters.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have