Abstract
This work presents an Insulator Metal Transition (IMT) based Integrate-And-Fire (IAF) neuron. The proposed neuron leverages the switching mechanism of the IMT device to deliver the neuron functionality without the need for complex CMOS circuitry. The IMT neuron parameters such as the threshold voltage and the refractory period, however, are dependent on the device parameters. Design expressions for the IMT neuron are derived. These expressions can aid designers choosing the proper circuit variables given a specific IMT device with a particular set of device parameters.
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