Abstract
We provide a set of design considerations for In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.52</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.48</sub> As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mum and 2.0 mum, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> doping profiles produce the lowest and highest excess noise in diodes with avalanche regions of 0.2 mum and 2.0 mum respectively. However due to the higher peak electric fields in thin diodes with field gradients causing tunneling current to become significant, the ideal p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -i-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> diodes still provide the overall preferred structure. We also observed that different electric field gradients in the p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> cladding regions have negligible effect on the excess noise factors.
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