Abstract
A novel multi-finger power SiGe heterojunction bipolar transistor (HBT) with segmented emitter fingers and nonuniform segment spacing was proposed to improve the thermal stability. Thermal simulation for a ten-finger power SiGe HBT with novel structure was conducted with ANSYS software. Three-dimensional temperature distribution on emitter fingers was obtained. Compared with traditional emitter structure, the maximum junction temperature of novel structure reduce significantly from 427.465K to 417.03K, the thermal resistance reduce from 170K/W to 156K/W, temperature distribution were significantly improved. Thermal stability was effective enhanced.
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