Abstract
The application of cyclic organometallic compounds as single source precursors for the chemical vapor deposition of materials such as AIN and SiC is discussed and new results relating to the decomposition of a novel SiC CVD precursor are presented. The decomposition of the cyclic carbosilane [μ-(CH 2) 2Si(CH 3)(H)Si(CH 3)(CH 2SiH 2CH 3)], ( I) on a heated glassy carbon subst rate in an ultra-high vacuum molecular beam system has been studied by pulsing the precursor molecule onto the surface and following the mass spectrum as a function of the substrate surface temperature. The evolution of CH 3SiH 2, C 2H 5 and CH 3 was evidenced, suggesting loss of excess carbon as C 1 and C 2 species.
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