Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

Lin Wang,Yun Zhang,Li-Fang Jia,Zhi-Guo Yu,Zhe Liu,Zhe Cheng,De-Feng Lin

doi:10.3390/app11157057

Abstract

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

Highlights

In recent years, GaN high electron mobility transistors (HEMTs) have been widely applied in power electronic converters to improve power density and efficiency, even under harsh operating environments, thanks to their high breakdown voltage, low onresistance, high switching speed, and high temperature capability [1,2,3,4]
To further reduce the inductance between the driver chip output terminal and the GaN HEMT gate, as well as the inductance in driver grounding, drivers and GaN HEMT dies were integrated into an 8.00 × 8.00 mm quad flat no-leads (QFN) package by Texas Instruments Incorporated [14]
It was shown that flip-chip technology can further reduce the parasitic inductance and make modules more compact than general wire bonding [15,16]

Summary

Introduction

GaN high electron mobility transistors (HEMTs) have been widely applied in power electronic converters to improve power density and efficiency, even under harsh operating environments, thanks to their high breakdown voltage, low onresistance, high switching speed, and high temperature capability [1,2,3,4]. In this paper, a GaN half-bridge module integrated with HEMTs and driver dies of the flip-chip was flat,The with almost no overshoot was fabricated using module flip-chip technology. These results ind double-pulse test and compared with that of a module that was packaged using the wire grated module with dies created using flip-chip technology can obtain bonding process. Fabrication fallModule and rise times of Vds were and 5.8 ns, respectively These results indicate that an integrated module with dies created using flip-chip technology can obtain superior. Shows module integration achieved ultra-small parasitic inductance of the loop.loop

Switching

During the turn-on waveforms of these two modules are in

Gate-source

Conclusions