Design and Simulation of Two-Dimensional Superlattice Steep Transistors

Abstract

We report design of double-gate metal-oxide-semiconductor field-effect-transistors having InGaAs/InAlAs superlattices between the N+ source and a planar InGaAs channel. As with nanowire superlattice transistors, the 2-D superlattice bandgap reduces injection into the channel of electrons having energy above the source Fermi energy. Simulated ballistic transport characteristics of FETs using a three-well superlattice show 29-37.5-mV/decade minimum subthreshold swing and 390-A/m ON-current given 0.1-A/m OFF-current and a 0.2 V power supply.