Abstract
This paper proposed a newdesign of top illuminated PIN photodetector at 1550nm wavelength for millimeter-wave applications. Device topology, structure and fabrication methods were considered in designing the photodetector. The combination material of InP/InGaAsP/InGaAs/InGaAsP was used in designing the top illuminated PIN photodetector. This PIN photodetector was targeted to produce at least 0.60A/W of responsivity with a dark current of <100nA. The design, layout, and electrical characteristics of this photodetector were carried out using SILVACO TCAD tool. The simulated results show higher responsivity value than targeted, device frequency response of -3dBm at 40GHz with targeted dark current achievable within the wavelength absorption bands specification. The results are compared with similar designs from other reported works.
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