Abstract
We investigate and demonstrate the thermal crosstalk problem in integrated photonic circuits with metal and silicon doped heaters. Further, we illustrate that due to the localized heating effect, integrated doped heaters are out-performed in terms of thermal crosstalk as compared to integrated metal heaters. To mitigate thermal crosstalk and enhance phase tuning efficiency further, a CMOS compatible air-filled trench region is realized between the doped heater and the adjacent element. The performances of three fundamental building blocks of integrated photonic circuits, namely, a PN phase shifter, an optical attenuator, and a ring resonator, are tested by full-wave thermal, charge, and optical simulations. Additionally, the impact of thermal crosstalk on the performance of integrated PN phase shifters and optical attenuators is examined thoroughly. The proposed low crosstalk thermal phase shifters might be very beneficial for densely routed complex integrated photonic circuits like photonic transceivers for data centers, optical phased array antennas, and photonic reservoirs.
Highlights
Compared to the electrical domain, signal processing in the optical domain, telecommunications, for instance, is a more viable option as it offers wide-bandwidth, relatively simple implementation, cost-effectiveness, power efficiency and provides strong immunity to electromagnetic interference (EMI)
There is a need for programmable processors and photonic signal processing based on integrated silicon photonics [2], since the existing electronic solutions are limited by power consumption and low bandwidth operation
Many diverse functionalities can be integrated on a single chip while the use of complementary metal oxide semiconductor (CMOS) electronics adds control to the photonic elements
Summary
Compared to the electrical domain, signal processing in the optical domain, telecommunications, for instance, is a more viable option as it offers wide-bandwidth, relatively simple implementation, cost-effectiveness, power efficiency and provides strong immunity to electromagnetic interference (EMI). Major contributions of this work include: (i) a performance comparison in terms of thermal efficiency and crosstalk between metal and doped silicon heaters on an SOI platform is examined and discussed, (ii) impact of thermal crosstalk on the performance of PN phase shifters and optical attenuators is investigated for the first time, (iii) the detailed analysis of the crosstalk mitigation and phase tuning efficiency enhancement by standard fabrication compatible air-filled trench region is presented comprehensively, (iv) full-wave 3D simulation results are provided and discussed to verify the effectiveness of the proposed air-filled trenches on the performances of three basic photonic components: integrated optical attenuators, PN phase shifters, and ring resonators.
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