Abstract
This article presents the design and simulation of RF microelectromechanical systems (MEMS) switch which works at X-band frequency(8-12 GHz). The design consists of a thin micromechanical bridge suspended over a silicon nitride which is used as the dielectric material with 0.1 µm thickness and air gap of switch is 0.9 µm. The design, modelling and simulation are done using the COMSOL Multiphysics 5.1. The designed switch has low actuation voltage, low pull-in voltage, optimum capacitance ratio, low switching time which makes it a perfect switch to work at X-band frequency. The switch has actuation voltage of 5 V, pull-in voltage of 1.58 V, capacitance ratio 66 and switching timing of 35 µs.
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