Abstract
A silicon resonant sensor with micro-cantilever structure based on MEMS technology is investigated. According to the principle of MEMS silicon micro-cantilever resonant sensor, the structure of sensor is designed and the locations of thermal excited and detected resistors are fixed respectively. With the IntelliSuite software, the dynamic characteristics are analyzed, and the relationship between dimensions and inherent frequency of resonant sensor is discussed. The conclusion shows that the inherent frequency is independent of cantilever width, but proportional to thickness directly. And also it shows a nonlinear proportional to length inversely. Furthermore, a feasible fabrication technology is made through experiment research. In order to acquire a perfectly micro-cantilever structure, a corner undercutting compensation is applied in KOH anisotropic etching, and the effect of compensation is well. Thus, the process periods decreases greatly by the simulation, the design result and quality are improved effectively, and it is useful to the actual production for MEMS sensors.
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