Abstract
The design and simulation of an In0.53Ga0.47As∕Al0.56As0.44Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ∼20% at 77K and sufficient gain to achieve room-temperature laser emission at λ∼2.8μm. Threshold currents in the range 4–8kA∕cm2 are estimated as the temperature increases from 77Kto300K. The output characteristics of the proposed laser are compared to an existing λ∼3.1μm In0.53Ga0.47As∕Al0.56As0.44Sb quantum-cascade structure presented in the literature.
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