Design and simulation of high-speed devices

Abstract

The main purpose of this chapter was to discuss the physical models necessary for simulation of advanced heterostructure devices, such as HBLs or HEMLs. Important material parameters of strained-SiGe have been considered. Comprehensive analytical models for material parameter of strained-SiGe films have been presented. The model equations account for valence band discontinuity, heavy doping effects, valence and conduction band effective densities of states and ionised doping concentration. Minority and majority electron and hole mobilities in the whole range from low to very high electric field have also been discussed in detail. The models are based on computed and experimental data available in the literature. SiGe material parameter models developed can be incorporated in commercially available simulators for simulation of SiGe HBLs. New models for physical properties with respect to material composition and strain conditions owing to lattice mismatch have to be developed.