Design and simulation of high-speed and low-power memcapacitor-based nonvolatile static cells using FinFET transistors

Abstract

Metal–oxide–semiconductor field-effect transistors (MOSFETs) are mostly used in the design of static cells. MOSFETs have disadvantages, such as increased leakage current, reduced reliability, increased short-channel effects, and large changes in parameters. In this paper, fin field-effect transistors (FinFETs) are used instead of MOSFETs. Memristive elements are used in the design of a nonvolatile static cell. The memory cell presented here includes a static random access memory (SRAM) core (a 6T FinFET cell in this case) with two memristors and two memcapacitors, thus making a 6T FinFET SRAM cell-based 2R2C. The designed nonvolatile memory cell performed better in terms of power consumption, energy, areal factors, static noise margin, write margin, and read/write propagation delay than other designs presented so far. The figures of merit of the proposed design are also substantially improved, making the presented scheme a better approach for ‘read-write’ operations. In this paper, we have tried to keep the load capacitance ( as small as possible to improve the power consumption and the write and read delays, because the capacitor charge has a direct relationship with the cell’s power consumption.