Abstract
Abstract In this paper, the improvement of the sensitivity of a capacitive MEMS pressure sensor is investigated. The proposed spring for the sensor can increase the sensitivity. Silicon is used as the substrate and gold and aluminium nitrate are used as the diaphragm and the dielectric layer, respectively. The dimensions of the diaphragm are 150 µm × 150 µm, which is suspended by four springs. The air gap between the diaphragm and the top electrode is 1.5 µm. The proposed structure is an efficient sensor for the pressures in the range of 1–20 kPa. By using the proposed design, the sensitivity of the MEMS sensor in 18 kPa has improved to 663 (× 10−3 pF/kPa).
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