Abstract
In this paper, a high efficiency Class-F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> power amplifier (PA) for the S-Band application is presented. The load network of the proposed Class-F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> PA satisfies the impedance requirements at f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> , 2f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> , and 3f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> frequency. The simulation results verify the analytical results. This power amplifier has been designed based on GaN HEMT device CGH40035F at a frequency band from 2.2-2.4 GHz. The results show drain efficiency and output power higher than 65% and 44.6 dBm, respectively. The obtained results show that the desired characteristics for the proposed PA have been obtained.
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