Abstract
In this paper, a novel high isolation switch was designed and optimized on high-resistance silicon substrate with all-metal beams. The RF MEMS switch was modeled with gold surface micro-fabrication process. To obtain a low actuation voltage and a better isolation, a folded structure in the shunt part of the switch and a short capacitance in the series part were designed, respectively. By combining the series and shunt switches, the mixed structure offered a wide range (DC-40GHz) with excellent isolation better than-35dB and insertion loss less than 0.72dB at the same range, making it promising for applications with wide frequency bands.
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