Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

T D Subash,T Gnanasekaran,J Jagannathan,C Divya

doi:10.1155/2014/196732

Abstract

Indium antimonide nanoparticles were synthesized at room temperature. X-ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose the simulator TCAD is used, by which the HEMT device is structured and its performance is analyzed and it is found that transistor operates as normal devices. This designed device is more valuable since a nanocomposite InSb material is used as a channel in HEMT device, thereby leading to the nanosized HEMT device. In addition, InSb has the property of high saturation velocity and mobility which results in higher performance of the device than any other materials in III-V compounds.

Highlights

For the last 30 years, Moore’s law has been a guiding principle for the semiconductor industry
While a matter of considerable debate, it is widely believed that this is the ultimate limit of CMOS scaling
In our novel research work the synthesis of InSb nanoparticle is highlighted in previous session since this is used as a layer for designing heterostructure devices

Summary

Introduction

For the last 30 years, Moore’s law has been a guiding principle for the semiconductor industry. While a matter of considerable debate, it is widely believed that this is the ultimate limit of CMOS scaling With this prospect, identifying a new semiconductor logic device technology that can sustain Moore’s law for a few additional generations is becoming increasingly pressing [6–15]. The binary compound semiconductors AlSb, GaSb, InSb, and InAs along with their related alloys are candidates for high-speed, low-power electronic devices [16]. The first HEMT were fabricated with GaAs channels and AlGaAs barriers [18] These devices are known as modulation doped field effect transistor (MODFET). The characteristics of nanoparticle are observed using XRD image and the performance of transistor is analyzed using simulator. This is dealt in the section “result and discussion”

Experimental Procedure of Indium Antimonide

Design of HEMT Device

Results and Discussion

Conflict of Interests