Abstract
In order to verify the performance of a graphene-based space radiation detection sensor, the radiation detection principle based on two-dimensional graphene material was analyzed according to the band structure and electric field effect of graphene. The method of space radiation detection based on graphene was studied and then a new type of space radiation sensor samples with small volume, high resolution, and radiation-resistance was formed. Using protons and electrons, the electrical performance of GFET radiation sensor was verified. The designed graphene space radiation detection sensor is expected to be applied in the radiation environment monitoring of the space station and the moon, and can also achieve technological breakthroughs in pulsar navigation and other fields.
Highlights
High-resolution radiation detectors are able to distinguish narrow energy peaks near room temperature or at room temperature, providing new capabilities for radiation detection and measurement in areas such as material characterization, astrophysics, homeland security, and nuclear forensics
The integration of graphene into the field-effect transistor structure can provide a very sensitive reading mechanism for sensing carriers in semiconductor detectors, making it possible to prepare radiation-sensitive detectors with high resolution [4]
Based on graphene’s energy belt structure and electric field effect, this paper mainly analyzes the irradiation response of electrons and protons for graphene field effect transistor, and provides guidance for the subsequent development of miniaturized detectors that can be used for space electron and proton detection
Summary
High-resolution radiation detectors are able to distinguish narrow energy peaks near room temperature or at room temperature, providing new capabilities for radiation detection and measurement in areas such as material characterization, astrophysics, homeland security, and nuclear forensics. There are potential materials for high-resolution radiation detectors, such as high-density, high-charge materials, such as mercury iodide (HgI2), zinc, and cadmium (CdZnTe), etc These materials have good energy deposition capacity and large-area preparation is possible, their electrical properties and charge collection properties are affected by silicon and niobium crystals. These broadband compound semiconductors are far less mature and advanced than monomass semiconductors in doping, processing, and integrated circuit technology, limiting their further application. The integration of graphene into the field-effect transistor structure can provide a very sensitive reading mechanism for sensing carriers in semiconductor detectors, making it possible to prepare radiation-sensitive detectors with high resolution [4]. Based on graphene’s energy belt structure and electric field effect, this paper mainly analyzes the irradiation response of electrons and protons for graphene field effect transistor, and provides guidance for the subsequent development of miniaturized detectors that can be used for space electron and proton detection
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