Design and Performance of an LPCVD Reactor for the Growth of 3C-Silicon Carbide

Abstract

This paper discusses the design of a low pressure chemical vapor deposition (LPCVD) reactor and growth of β silicon carbide (3C-SiC) thin films on Si. The reactor’s hot-zone configuration radiatively couples the graphite heater (no physical contact) to Si substrates with realized temperatures . We implemented a four-stage growth procedure using silane and propane precursors and hydrogen as the carrier gas. Temperatures, pressures, and flows varied from , from , and from during growth, respectively. Growth of 3C-SiC was confirmed using X-ray diffraction (XRD) with the observation of a (200) peak located at 41.4°. Activation energies of 21.5 and were calculated for the kinetically and mass-transport-limited regimes for polycrystalline 3C-SiC growth. The polycrystalline 3C-SiC films with fewest defects and smallest XRD full width at half-maximum were deposited at with a growth rate of using flow rates of , , and of (conc. 1.16%). The composition of the films measured by X-ray photoelectron spectroscopy shows that the films are slightly carbon rich with oxygen as the main source of contamination. Voids were observed at the film–substrate interface for samples grown at high precursor concentrations.