Abstract
This paper presents a source pocket-based charge plasma tunnel field-effect transistor with gate-drain underlap engineering (SP-GDUCPTFET) intending to maximize the ION/IAmb current switching ratio. Introducing a low bandgap Si0.6Ge0.4 pocket in the source region enhances the ON-state current (ION) thanks to the lower tunneling distance at the proximity of the source interface. Similarly, the device with underlap technique provides an 8-decades reduced ambipolar current (IAmb) with a lower subthreshold swing (SS). The proposed structure provides a maximum ION/IAmb current ratio of 1.88 × 1013 μA μA−1 and ION/IOFF ratio of 1.04 × 1014 μA μA−1. Further, the suggested device’s DC and analog/RF performance with underlap length (Lund) of 15 nm is investigated extensively. DC performances such as drain current characteristics, energy band diagram, surface potential analysis, band-to-band tunneling (BTBT) rate, lateral electric field, current ratios, the concentration of charges, and output characteristics have been discussed. In addition, the radio frequency (RF) analysis and the key figure of merits have been analyzed thoroughly to exhibit its superiority in high-frequency applications.
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