Abstract
Along with the expensive fabrication process, ultra-small devices suffer from short channel effects as well; hence, it is suitable to simulate before fabrication but modern simulators lack inclusion of quantum parameters. In this work, charge plasma-based nanoFET on insulator has been analyzed using NEGF. Behavior of the device is briefed using quantum parameters like density of states and transmission probability. The device is analyzed against physical variations, such as variation in electrode work function, variation in gate dielectric and thickness of body insulator. With Hafnium as source electrode and Palladium, Copper as gate and drain electrode respectively, investigated device resulted in IOFF of 1.94 × 10−13 A/μm and high ION/IOFF of 7.62 × 108. For the aforementioned optimum parameters, a low DIBL of 0.13 mV/V was observed. Incorporation of quantum effects heightens the precision of the device and hence, the analyzed device can be used for future applications.
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