Abstract
The Fifth Generation (5G) of technology has losses in reflection from the receiver of the Massive-Multiple-Input Multiple-Output (m-MIMO) base station. For this reason, a model has been proposed as a solution to the performance improvement and efficiency in the 5G base station. This technology uses the MOSFET transistor as a basic cell. This MOSFET is made up of SiO2. Various performance parameters (gain, reflection coefficient, total power absorbed by SiO2 based MOSFET, S-parameter, efficiency, etc.) have been analyzed for the proposed model's validity, stability, and reliability. In addition to this, the comparison has been made with existing models using efficiency, RF power absorption level, and ease of implementation as a standard for comparison.
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