Abstract
Design and performance analysis of A Triple Material Double Gate Cylindrical Gate All Around (TMDG CGAA) MOSFET in Nano-meter Regime
Highlights
To give superior exemption to short channel effects (SCE) in the nanometer regime the MOSFET can be improved from conventional MOSFETs to Cylindrical Gate All Around (CGAA) MOSFETs
The gate to source voltage is changing between the 0V to 1V and at the VDS = 1V, the maximum drain current (ID) is 0.1628 mA and 0.3052 mA for SGCGAA MOSFET and DG-CGAA MOSFET respectively
The Ion/Ioff ratio is effectively increased in the DG CGAA MOSFET than the SG CGAA MOSFET
Summary
To give superior exemption to SCEs in the nanometer regime the MOSFET can be improved from conventional MOSFETs to Cylindrical Gate All Around (CGAA) MOSFETs. The double-gate MOSFET structure rises the volume inversion so the electrical characteristics Ion/I off ratio increases [6]. The proposed structure has superior gate controlling because of the cylindrical structure with the double gate and decreased the SCEs and improves the drain current due to the triple material used in both the gates. Source and drain terminal controls the gate electrode in the short channel device instead of the channel region in the short channel length devices. A device having the channel length is of the similar order of magnitude when depletion-layer widths ( , ) of the drain and source terminal, this is known as a short channel device. There are many Short Channel Effects like Hot carrier effects, DIBL, a threshold voltage (Vth) roll-off, etc [8,9,10]
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