Design and Parametric Variation Assessment of Dopingless Nanotube Field-Effect Transistor (DL-NT-FET) for High Performance

Jeetendra Singh,Debapriya Chakraborty,Naveen Kumar

doi:10.1007/s12633-021-01182-5

Abstract

In this paper, a dopingless nanotube field-effect transistor (DL-NT-FET) has been proposed and its performance analysis is carried out by eliminating doping, which is brought in by the application of the charge-plasma technique. A comparative examination of transfer characteristics, transconductance (gm), gate capacitances (Cgs, Cgd), output characteristics, output conductance gds, and various performance parameters are investigated by varying the channel length, radius, gate work function, and temperature. Results revealed that increasing the channel length improves subthreshold slope with greater ION/IOFF and less threshold voltage. It has been also noticed that increase in the radius of the nanotube or an increase in temperature results in just the opposite effect of that observed in the case of increasing channel length. The IOFF value increases significantly on increasing the temperature while the small degradation in the ION has been noticed as a result of mobility degradation and velocity saturation. The output conductance gds also degrades on increasing the temperature. A proliferation of 39 % is observed in the Cgs at the VGS of 0.45 V on increasing the channel length from 20 nm to 35 m whereas no significant changes are observed in the Cgd for the same increment in the channel length.

Highlights

The complementary metal-oxide-semiconductor (CMOS) technology has advanced through the decades to dominate the semiconductor industry with excellent features of low power and cost, dense packaging, and high-speed devices that are continuously scaled down in size [1,2,3]
6 orders diminution in the ION/It can be observed that the OFF-current (IOFF) ratio is noticed when the temperature is increased from 200 K to 450 K. threshold voltage and the average subthreshold slope (AVSS) both are rose with the temperature
Different characteristics of the device have been examined by technology computer-aided design (TCAD) simulated results

Summary

Introduction

The complementary metal-oxide-semiconductor (CMOS) technology has advanced through the decades to dominate the semiconductor industry with excellent features of low power and cost, dense packaging, and high-speed devices that are continuously scaled down in size [1,2,3]. A comparative examination of transfer characteristics (I D -V GS ), transconductance (g m ), gate capacitances (C gs and C gd ), output characteristics (I D -V DS ), output conductance (g ds ), average subthreshold slope (AVSS), the threshold voltage (V t ), the ratio of on-current to off-current (I ON /I OFF ) and on-current has been made by varying the channel length (Lg), radius (R), gate work function (Φ), and temperature.

Results

Conclusion