Abstract
The β-Ga2O3 trench Schottky barrier-controlled Schottky (TSBS) diode combining a low barrier and a high barrier is proposed. The TSBS diode has a low turn-on voltage of 0.73 V, 33% smaller than the normal Schottky diode with a high barrier height (HSB). The leakage current density for the TSBS diode is lower than 1.9 × 10−9 A/cm2 at an anode voltage of −2000 V, which is four orders of magnitude lower than the Schottky diode with a low barrier height. Moreover, the TSBS diode exhibits the highest on/off current ratio of 1.59 × 1010 at 1 V/-500 V. The breakdown voltage for the TSBS diode is slightly lower than that of the HSB diode due to the presence of a peak electrical field near the trench corner. The impacts of mesa width and drift region doping concentration on the electrical characteristics are investigated to optimize the device's structure parameters.
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