Abstract
In this paper, characterization and optimization have been performed on the 2-b floating-gate-type nonvolatile memory (NVM) cell based on a double-gate (DG) MOSFET structure using two-dimensional numerical simulation. The thickness and the difference of charge amount between programmed and erased states are found to be the crucial factors that put the NVM cell operation under optimum condition. Under fairly good conditions, the silicon thickness can reach below 30 nm while suppressing the read disturbance level within 1 V. With these results, operating schemes are investigated for both NAND - and NOR-type memory cells. This paper is based on simulation works which can give a reasonable intuition in flash memory operation. Although we adopted a floating-gate-type device since the exact modeling of Si/sub 3/N/sub 4/ used for the storage node is absent in the current numerical simulator, this helps to predict the operation of an oxide-nitride-oxide dielectric flash memory cell at a good degree.
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