Abstract
We have introduced and demonstrated a three-dimensional, multidirectional photodetector (PD) made of germanium for optoelectronic integration (OEI) systems. Building upon the fundamental physical principles of PDs, we focused on the design aspects of structure, dimensions, and doping. This led to the development of an integrated chip-level PD capable of discerning light from four different directions. Simulation verification confirmed that the key performance parameters of the four equivalent PDs meet the specified requirements. Importantly, we have identified the device's ability and strategy to evaluate light signals from different directions, as well as the impact of fluctuations in light intensity on the accuracy of the judgments. In-depth investigations into the effects of external bias, doping concentration, and doping region have been conducted to further optimize parameters, enhancing the performance of the proposed device. Overall, the current work will help improve the efficiency of PD and enhance the integration of future OEI chips.
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