Abstract
Designs for 980 nm AlxGa1−xAs/In0.2Ga0.8As/GaAs high-power, high-brightness semiconductor lasers/amplifiers with distributed phase correction and short-cavity lengths (i.e. cavity lengths 560–1040 μm) are presented. The proposed lasers/amplifiers employ a single mode feed waveguide coupled to a power amplifier with a laterally graded effective refractive index (GRIN) profile to control the lateral mode shape and phase. The lateral index of the power amplifier has a hyperbolic secant (HYSEC) profile, which can be approximately realised by tailoring the effective refractive index of the amplifier using a series of discrete etches. The epitaxial and structure designs of the laterally discretised GRIN lasers/amplifiers are presented. Finally, a method for improving the effective refractive index discretisation is described.
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