Abstract
Design and simulations of an integrated photonic device that can optically detect the magnetization direction of its ultra-thin (∼12 nm) metal cladding, thus ‘reading’ the stored magnetic memory, are presented. The device is an unbalanced Mach Zehnder Interferometer (MZI) based on InP Membrane on Silicon (IMOS) platform. The MZI consists of a ferromagnetic thin-film cladding and a delay line in one branch, and a polarization converter in the other. It quantitatively measures the non-reciprocal phase shift caused by the Magneto-Optic Kerr Effect in the guided mode which depends on the memory bit’s magnetization direction. The current design is an analytical tool for research exploration of all-optical magnetic memory reading. It has been shown that the device is able to read a nanoscale memory bit (400 × 50 × 12 nm) by using a Kerr rotation as small as 0.2∘, in the presence of a noise ∼10 dB in terms of signal-to-noise ratio. The device is shown to tolerate performance reductions that can arise during the fabrication.
Highlights
In the modern world, exponentially increasing generation of data and its handling require novel technologies that perform faster and more energy efficiently
In order to increase the efficiency of the mode conversion, we propose the use of perpendicular magnetic anisotropy (PMA) magnetic claddings, which have not been seriously addressed yet in a photonic perspective
To assess the feasibility of using Magneto-optic Kerr Effect (MOKE) for on-chip all-optical magnetic memory reading functionality, as well as using it as an analytical tool to quantitatively measure magnetization-induced mode conversion, we investigated specially designed photonic devices whose waveguides are cladded with ultra-thin (12 nm), nano-scale (50 × 400 nm) PMA magnetic memory bits, of the composition mentioned before
Summary
Exponentially increasing generation of data and its handling require novel technologies that perform faster and more energy efficiently To answer this need, optical components are being used in combination with electronic circuitry to improve the speed and bandwidth of data communication and telecommunication. Researchers continue to demonstrate the superior performance circuitry achieved through the integration of photonics into electronics [4,5,6,7] These advances require back-and-forth signal conversion between optical and electrical domains, which happens to be the new bottleneck in data communication and processing. Addressing this problem requires establishing novel functionalities in photonic devices that will enable a seamless conversion.
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