Abstract
To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL), nanometre-scale Si finger junctions were manufactured in a fully customized silicon-on-insulator (SOI) production technology. The wafers were manufactured in the cleanroom using an electron-beam pattern generator (EPG). The SOI light source with the highest irradiance emitted about 9 times more optical power around λ = 850 nm than a 0.35 μm bulk-CMOS avalanche light-source operating at the same current. It is shown that the buried oxide (BOX) layer in a SOI process could be used to reflect about 25 % of otherwise lost downward-radiated light back up to increase the external power efficiency of SOI light sources.
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