Design and Lasing Operation of Micro-Arc-Ring Lasers

Abstract

A micro-arc-ring cavity (MARC) laser is proposed for microphotonic integrated circuits. This device is based on tightly confined optical waves by a total internal reflection in a lateral microcavity. We present a basic design concept of a MARC laser for low-threshold operation and for transverse mode control. We have fabricated a 0.98 µ m GaInAs/GaAs strained quantum well MARC laser by using direct electron beam lithography and reactive ion beam etching. The reflectivity of the etched reflector was estimated to be ∼ 74% from the threshold.