Design and implementation of power efficient 10-bit dual port SRAM on 28 nm technology

Abstract

In this paper, 10 bit synchronous clock gated Dual port RAM has been designed. The negative latch based clock gating technique has been employed to optimize the power of the design. The design has been implemented on XV7K70T device, -3 speed grade, and kintex 7 FPGA family on Xilinx ISE Design Suite 14.7 using 28 nm technology. The design has been synthesized using Verilog HDL. We have been successful in achieving approximately 55 % reduction in total clock power, 81.55% reduction in BRAM power, 82.65%, 0.07%, 1.04% and 11.31% reduction in static power, 72.32%, 38.60%, 68.74% and 71.97%, reduction in dynamic power and 72.44%, 16.96%, 60.88% and 71.06% reduction in total supply power at 1 THz, 1GHz, 100 GHz and 1000 GHz frequency respectively. The power of the device has been calculated using XPower Analyzer tool of Xilinx ISE Design Suite 14.7.